Semiconductor component that includes a common mode filter and method of manufacturing the semiconductor component

ABSTRACT

In accordance with an embodiment, a semiconductor component, includes a common mode filter monolithically integrated with a protection device. The common mode filter includes a plurality of coils and the protection device has a terminal coupled to a first coil and another terminal coupled to a second coil.

TECHNICAL FIELD

The present invention relates, in general, to semiconductor componentsand, more particularly, to signal transmission in semiconductorcomponents.

BACKGROUND

Transmission protocols within communications systems may include the useof single-ended signals, differential signals, or combinations ofsingle-ended and differential signals. For example, single-ended signalsand differential signals are suitable for use in portable communicationssystems that employ low speed data transmission. However, incommunications systems that employ high speed data transmission, it isdesirable to use differential signals because of their noise immunityproperties. These types of systems include mobile electronic devicessuch as, for example, smartphones, tablets, computers, and systems thatinclude Universal Serial Bus (USB) applications. In addition to noiseimmunity, it is desirable to include protection from large transientvoltage and current spikes, which can damage these systems. Typically,noise filters, also known as Common Mode Filters (CMF) andElectro-Static Discharge (ESD) protection circuits are mounted to aPrinted Circuit Board (PCB) along with other circuitry of thecommunications system to reduce common mode noise on differential signallines and to suppress large transient electrical spikes, respectively.This configuration of elements occupies a large area on a PCB, which isdisadvantageous in mobile electronic devices. The ESD protectioncircuits are fabricated from low resistivity substrates to accommodatehigh currents encountered during ESD events. It is undesirable tomanufacture filter elements such as inductor coils on a low resistivitysubstrate because of the presence of eddy currents which degrade filterperformance.

Accordingly, it would be advantageous to have a structure and method formanufacturing a semiconductor component that provides protection fromlarge electrical transients and provides noise filtering. It would be offurther advantage for the structure and method to be cost efficient toimplement.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be better understood from a reading of thefollowing detailed description, taken in conjunction with theaccompanying drawing figures, in which like reference charactersdesignate like elements and in which:

FIG. 1 is a cross-sectional view of a semiconductor component at anearly stage of manufacture in accordance with an embodiment of thepresent invention;

FIG. 2 is a cross-sectional view of the semiconductor component of FIG.1 at a later stage of manufacture;

FIG. 3 is a cross-sectional view of the semiconductor component of FIG.2 at a later stage of manufacture;

FIG. 4 is a cross-sectional view of the semiconductor component of FIG.3 at a later stage of manufacture;

FIG. 5 is a is a cross-sectional view of the semiconductor component ofFIG. 4 at a later stage of manufacture;

FIG. 6 is a cross-sectional view of the semiconductor component of FIG.5 at a later stage of manufacture;

FIG. 7 is a cross-sectional view of the semiconductor component of FIG.6 at a later stage of manufacture;

FIG. 8 is a cross-sectional view of the semiconductor component of FIG.7 at a later stage of manufacture;

FIG. 9 is a cross-sectional view of the semiconductor component of FIG.8 at a later stage of manufacture;

FIG. 10 is a cross-sectional view of the semiconductor component of FIG.9 at a later stage of manufacture;

FIG. 11 is a cross-sectional view of the semiconductor component of FIG.10 at a later stage of manufacture;

FIG. 12 is a top view of a coil pattern for use in manufacturing thesemiconductor component of FIG. 11;

FIG. 13 is a cross-sectional view of the semiconductor component of FIG.11 at a later stage of manufacture;

FIG. 14 is a cross-sectional view of the semiconductor component of FIG.13 at a later stage of manufacture;

FIG. 15 is a cross-sectional view of the semiconductor component of FIG.14 at a later stage of manufacture;

FIG. 16 is a top view of a coil pattern for use in manufacturing thesemiconductor component of FIG. 15;

FIG. 17 is a cross-sectional view of the semiconductor component of FIG.15 at a later stage of manufacture;

FIG. 18 is a circuit schematic of a semiconductor component inaccordance with another embodiment of the present invention;

FIG. 19 is a circuit schematic of a semiconductor component inaccordance with another embodiment of the present invention;

FIG. 20 is a circuit schematic of a semiconductor component inaccordance with another embodiment of the present invention;

FIG. 21 is a circuit schematic of a semiconductor component inaccordance with another embodiment of the present invention;

FIG. 22 is a top view of a layout of a semiconductor component inaccordance with another embodiment of the present invention;

FIG. 23 plot of the common mode and differential mode performance of asemiconductor component in accordance with an embodiment of the presentinvention;

FIG. 24 is a plot of the ElectroStatic Discharge clamping performance ina positive direction of a semiconductor component in accordance with anembodiment of the present invention; and

FIG. 25 is a plot of the ElectroStatic Discharge clamping performance ina negative direction of a semiconductor component in accordance with anembodiment of the present invention.

For simplicity and clarity of illustration, elements in the figures arenot necessarily to scale, and the same reference characters in differentfigures denote the same elements. Additionally, descriptions and detailsof well-known steps and elements are omitted for simplicity of thedescription. As used herein current carrying electrode means an elementof a device that carries current through the device such as a source ora drain of an MOS transistor or an emitter or a collector of a bipolartransistor or a cathode or anode of a diode, and a control electrodemeans an element of the device that controls current flow through thedevice such as a gate of an MOS transistor or a base of a bipolartransistor. Although the devices are explained herein as certainn-channel or p-channel devices, or certain n-type or p-type dopedregions, a person of ordinary skill in the art will appreciate thatcomplementary devices are also possible in accordance with embodimentsof the present invention. It will be appreciated by those skilled in theart that the words during, while, and when as used herein are not exactterms that mean an action takes place instantly upon an initiatingaction but that there may be some small but reasonable delay, such as apropagation delay, between the reaction that is initiated by the initialaction. The use of the words approximately, about, or substantiallymeans that a value of an element has a parameter that is expected to bevery close to a stated value or position. However, as is well known inthe art there are always minor variances that prevent the values orpositions from being exactly as stated. It is well established in theart that variances of up to about ten percent (10%) (and up to twentypercent (20%) for semiconductor doping concentrations) are regarded asreasonable variances from the ideal goal of exactly as described.

DETAILED DESCRIPTION

Generally, the present invention provides a semiconductor componentcomprising a common mode filter monolithically integrated with aprotection device and a method for manufacturing the semiconductorcomponent wherein the common mode filter comprises a first coil havingfirst and second terminals; a second coil having first and secondterminals, the first terminal of the second coil coupled to the firstterminal of the first coil, the first coil magnetically coupled to thesecond coil; and the protection device having a first terminal coupledto the first terminal of the first coil and a second terminal coupled tothe first terminal of the second coil.

In accordance with an embodiment, the protection device comprises afirst diode having an anode and a cathode, the cathode coupled to thefirst terminal of the first coil and a second diode having an anode anda cathode, the anodes of the first and second diodes coupled togetherand the cathode of the second diode coupled to the first terminal of thesecond coil.

In accordance with another embodiment, the protection device furthercomprises a first capacitor coupled between the first terminal and thesecond terminal of the first coil and a second capacitor coupled betweenthe first terminal and the second terminal of the second coil.

In accordance with another embodiment, a protection device comprises afirst diode having an anode and a cathode and a second diode having ananode and a cathode, the cathode of the first diode coupled to the firstterminal of the first coil, the cathode of the second diode coupled tothe anode of the first diode.

In accordance with another embodiment, the semiconductor componentfurther includes a transistor having a control electrode and first andsecond current carrying electrodes, the first current carrying electrodecoupled to the cathode of the first diode and the second currentcarrying electrode coupled to the anode of the second diode.

In accordance with another embodiment, a protection device furthercomprises a third diode having an anode and a cathode, the anode of thethird diode coupled to the anode of the second diode and a fourth diodehaving an anode and a cathode, the anode of the fourth diode coupled tocathode of the third diode and to the first terminal of the second coil.

In accordance with another embodiment, the semiconductor componentfurther includes a first transistor having a control electrode and firstand second current carrying electrodes, the first current carryingelectrode coupled to the cathode of the first diode and the secondcurrent carrying electrode coupled to the anode of the second diode andto the anode of the third diode and a second transistor having a controlelectrode and first and second current carrying electrodes, the firstcurrent carrying electrode of the second transistor coupled to thesecond current carrying electrode of the first transistor, and thesecond current carrying electrode of the second transistor coupled tothe anode of the fourth diode.

In accordance with another embodiment, a method for manufacturing asemiconductor component having a common mode filter monolithicallyintegrated with a protection device, comprising: providing asemiconductor material having a major surface and a resistivity of atleast 5 ohm-centimeters; forming a plurality of trenches in thesemiconductor material; forming the protection device from thesemiconductor material between first and second trenches of theplurality of trenches; and monolithically integrating a common modefilter with the protection device.

In accordance with another embodiment, providing the semiconductormaterial comprises: providing a semiconductor substrate having aresistivity of at least 10 ohm-centimeters; forming a first epitaxiallayer of a first conductivity type over the semiconductor substrate; andforming a second epitaxial layer of a second conductivity type over thefirst epitaxial layer.

In accordance with another embodiment, the method further includesforming a buried layer of the first conductivity type from portions ofthe first and second epitaxial layers.

In accordance with another embodiment, forming the plurality of trenchesincludes forming at least first, second, third, and fourth trenches,wherein a portion of the semiconductor material between the first andsecond trenches serves as a first device region, a portion of thesemiconductor material between the second and third trenches serves as asecond device region, and a portion of the semiconductor materialbetween the third and fourth trenches serves as a third device region.

In accordance with another embodiment, the method further includesforming a first diode from the first device region, a second diode fromthe second device region, and a transistor from the third device region.

In accordance with another embodiment, the method further includesforming a first and second dopant regions of the second conductivitytype in the third device region; forming third and fourth dopant regionsof the second conductivity type in the first and second dopant regionsand fifth and sixth dopant regions of the second conductivity type inthe first and second device regions, respectively; and forming seventhand eighth dopant regions of the first conductivity type in the firstand second device regions, respectively.

In accordance with another embodiment, the method further includesforming a first dielectric layer over the semiconductor material, thefirst dielectric layer configured to magnetically decouple the commonmode filter from the protection structure; forming a first coil of thecommon mode filter over the first dielectric layer; forming a seconddielectric layer over the first coil and the first dielectric layer; andforming a second coil over the second dielectric layer, the seconddielectric layer configured to magnetically coupled the first coil andthe second coil.

In accordance with another embodiment, the method further includesforming a third layer of dielectric material over the second coil andthe second layer of dielectric material.

In accordance with another embodiment, the first, second, and thirdlayers of dielectric material are photosensitive polyimides.

In accordance with another embodiment, a semiconductor component thatincludes a common mode filter monolithically integrated with aprotection device, the semiconductor component is provided thatcomprises: a semiconductor material having a peripheral region, acentral region, and a resistivity of at least 5 ohm-centimeters, whereinthe central region comprises a plurality of device regions isolated byisolation trenches; a first coil over a first portion of the centralregion; a second coil over a second portion of the central region; afirst insulating material over the first and second coils; and aprotection device monolithically integrated with the first and secondcoils, the protection device having a first terminal coupled to thefirst coil and a second terminal coupled to the second coil.

In accordance with another embodiment, the semiconductor materialcomprises an epitaxial layer formed on a semiconductor substrate, andthe semiconductor component further comprises: a first metallizationsystem over portions of the epitaxial layer; a first layer of dielectricmaterial over the first metallization system; the first coil over thefirst layer of dielectric material, the first coil having coil elements;a second layer of dielectric material over the first coil; and thesecond coil over the first layer of dielectric material, the coilelements of the second coil laterally offset from the coil elements ofthe first coil.

In accordance with another embodiment, the first layer of dielectricmaterial and the second layer of dielectric material are photosensitivepolyimide.

In accordance with another embodiment, the semiconductor componentfurther includes a first contact structure extending through the firstlayer of dielectric material, through the second layer of dielectricmaterial and in contact with a portion of the first metallizationsystem.

FIG. 1 is a cross-sectional view of a portion of a semiconductorcomponent 100 such as, for example, a common mode filter monolithicallyintegrated with Electrostatic Discharge (ESD) protection devices, duringmanufacture in accordance with an embodiment of the present invention.What is shown in FIG. 1 is a semiconductor material 102 having opposingsurfaces 104 and 106. Surface 104 is also referred to as a front or topsurface and surface 106 is also referred to as a bottom or back surface.In accordance with this embodiment, semiconductor material 102 comprisesa semiconductor substrate 108 doped with an impurity material of p-typeconductivity and having a resistivity of at least about 100Ohm-centimeter (Ω-cm). Preferably, the resistivity of substrate 108 is100 Ω-cm. More preferably, the resistivity of substrate 108 is 500 Ω-cmor more, and even more preferably the resistivity of substrate 108 is1,000 Ω-cm or more. Suitable materials for substrate 108 include siliconand compound semiconductor materials such as, for example, galliumnitride, gallium arsenide, indium phosphide, Group III-V semiconductormaterials, Group II-VI semiconductor materials, or the like.

In accordance with an embodiment, semiconductor material 102 furthercomprises an epitaxial layer 110 of n-type conductivity formed on highresistivity substrate 108 and an epitaxial layer 112 of p-typeconductivity formed on epitaxial layer 110. A buried layer 114 is formedin a portion of epitaxial layers 110 and 112.

It should be noted that a region or layer doped with an n-type dopant orimpurity material is said to be of an n-type conductivity or an nconductivity type and a region or layer doped with a p-type dopant orimpurity material is said to be of a p-type conductivity or a pconductivity type.

A layer of dielectric material 118 is formed on or from semiconductormaterial 102. In accordance with an embodiment, the material ofdielectric layer 118 is silicon dioxide having a thickness ranging fromabout 1,000 Angstroms (Å) to about 10,000 Å. Techniques for formingsilicon dioxide layer 118 are known to those skilled in the art. Forexample, dielectric layer 118 may be formed by oxidizing semiconductormaterial 102 or it may be a TEOS layer formed using plasma enhancedchemical vapor deposition. Still referring to FIG. 1, a layer ofphotoresist is patterned over dielectric layer 118 to form a maskingstructure 120 having masking elements 122 and openings 124 that exposeportions of dielectric layer 118.

Referring now to FIG. 2, the portions of dielectric layer 118unprotected by masking elements 122 are removed using a wet etch thatselectively etches the material of dielectric layer 118. Trenches 126are formed through the portions semiconductor material 102 that areexposed by the removal of the portions of dielectric layer 118. Inaccordance with an embodiment, trenches 126 extend from surface 104through epitaxial layer 112, buried layer 114, epitaxial layer 110 andinto semiconductor substrate 108. Alternatively, trenches 126 terminatebefore reaching semiconductor substrate 108. Trenches 126 createepitaxial regions 112A, 112B, 112C, and 112D from epitaxial layer 112,epitaxial regions 110A, 110B, 110C, and 110D from epitaxial layer 110,and buried layer regions 114A, 114B, and 114C from buried layer 114.

Still referring to FIG. 2, masking elements 122 and any oxide, includingdielectric layer 118, are removed and a dielectric layer 128 is formedon the exposed portions of epitaxial layer 112 including epitaxialregions 112A, 112B, 112C, and 112D and on trenches 126. By way ofexample dielectric layer 128 is oxide having a thickness above surface104 ranging from 150 Å to about 400 Å, which oxide may be referred to asa pad oxide. It should be noted that a pad oxide may be referred to as ascreen oxide. A layer of photoresist is patterned over dielectric layer128 to form a masking structure 130 having masking elements 132 andopenings 134 that expose portions of dielectric layer 128 over epitaxialregion 112C.

P-type dopant regions 140 and 142 are formed in epitaxial region 112C byimplanting an impurity material of p-type conductivity through theexposed portions of dielectric layer 128 and into epitaxial region 112C.P-type dopant regions 140 and 142 may be formed by implanting theimpurity material into epitaxial region 112C at a dose ranging fromabout 5×10¹² atoms per square centimeter (atoms/cm²) to about 1×10¹⁴atoms/cm² and an implant energy ranging from about 25 kilo-electronVolts(keV) to about 50 keV.

Referring now to FIG. 3, masking elements 132 are removed and the p-typedopant or impurity materials are driven into epitaxial region 112C byplacing semiconductor material 102 in an inert ambient environment at atemperature ranging from about 1,000° C. to about 1,250° C. for a timeranging from about 2.5 hours to about 3.5 hours. By way of example,p-type dopant regions 140 and 142 are formed by implanting the p-typeimpurity material at a dose of about 2×10¹³ atoms/cm² and an implantenergy of about 35 keV and driving the dopant into semiconductormaterial 102 for about 3 hours in a nitrogen ambient environment at atemperature of about 1,150° C. Suitable p-type dopants or impuritymaterials include boron, indium, or the like. It should be noted thatp-type dopant regions 140 and 142 are within epitaxial region 112C andthat they are laterally spaced apart from each other.

Still referring to FIG. 3, a layer of photoresist is patterned overdielectric layer 128 to form a masking structure 144 having maskingelements 146 and openings 148 that expose portions of dielectric layer128 over epitaxial regions 112A, 112B, and 112C. An n-type dopant region150 is formed in epitaxial region 112A, an n-type dopant region 152 isformed in epitaxial region 112B, and n-type dopant regions 154 and 156are formed in p-type dopant regions 140 and 142, respectively, byimplanting an impurity material of n-type conductivity throughdielectric layer 128 and into epitaxial regions 112A, 112B, and 112C.N-type dopant regions 150, 152, 154, and 156 may be formed by implantingthe impurity material through the exposed portions of dielectric layer128 and into epitaxial regions 112A, 112B, and 112C at a dose rangingfrom about 5×10¹² atoms/cm² to about 1×10¹⁴ atoms/cm² and an implantenergy ranging from about 25 keV to about 50 keV.

Referring now to FIG. 4, masking elements 146 are removed and a layer ofphotoresist is patterned over dielectric layer 128 to form a maskingstructure 160 having masking elements 162 and openings 163 that exposeportions of dielectric layer 128 over epitaxial regions 112A and 112B. Ap-type dopant region 164 is formed in epitaxial region 112A and a p-typedopant region 166 is formed in epitaxial region 112B by implanting animpurity material of p-type conductivity through the exposed portions ofdielectric layer 128 and into epitaxial regions 112A and 112B. P-typedopant regions 164 and 166 may be formed by implanting the impuritymaterial into epitaxial regions 112A and 112B at a dose ranging fromabout 5×10¹² atoms/cm² to about 1×10¹⁴ atoms/cm² and an implant energyranging from about 25 keV to about 40 keV. By way of example, p-typedopant regions 164 and 166 are formed by implanting the p-type impuritymaterial at a dose of 2×10¹³ atoms/cm² and an implant energy of about 35keV and driving the dopant into epitaxial regions 112A and 112B forabout 3 hours in a nitrogen ambient environment at a temperature ofabout 1,150° C. Driving in the impurity material also annealssemiconductor material 102. Suitable p-type dopants or impuritymaterials include boron, indium, or the like. It should be noted thatp-type dopant regions 164 and 166 are laterally spaced apart from n-typedopant regions 150 and 152, respectively.

Referring now to FIG. 5, masking elements 162 are removed and anydielectric material including dielectric layer 128 are removed and alayer of dielectric material 168 is formed on semiconductor substrate102 and over trenches 126. A layer of dielectric material 170 is formedon dielectric layer 168 and a layer of dielectric material 172 is formedon dielectric layer 168. Dielectric layer 168 may be formed by oxidationand may have a thickness ranging from about 100 Å to about 500 Å,dielectric layer 170 may be an undoped silicon glass formed by plasmaenhanced chemical vapor deposition and may have a thickness ranging fromabout 1,000 Å to about 3,000 Å, and dielectric layer 172 may beborophosphosilicate glass formed by plasma enhanced chemical vapordeposition and may have a thickness ranging from about 5,000 Å to about10,000 Å. By way of example, dielectric layer 168 has a thickness ofabout 140 Å, dielectric layer 170 has a thickness of about 1,300 Å, anddielectric layer 172 has a thickness of about 6,000 Å. A reflow cycle isperformed at a temperature ranging from about 900° C. to about 1,000° C.to planarize dielectric layer 172 and to activate the dopants of dopantregions 150, 152, 154, 156, 164, and 166. By way of example, the reflowcycle is at about 950° C. It should be noted that the thicknesses andmethods of forming dielectric layers 168, 170, and 172 are notlimitations of the present invention.

Still referring to FIG. 5, a layer of photoresist is patterned overdielectric layer 172 to form a masking structure 174 having maskingelements 176 and openings 178 that expose portions of dielectric layer172.

Referring now to FIG. 6, the portions of dielectric layer 172 exposed byopenings 178 and the portions of dielectric layers 170 and 168unprotected by masking elements 176 are removed using, for example, awet etch technique. Removing the portions of dielectric layers 172, 170,and 168 exposes portions of dopant regions 150, 152, 154, 156, 164, and166. Masking elements 176 are removed and a layer of refractory metal(not shown) is deposited over dielectric layer 172 and the exposedportions of dopant regions 150, 152, 154, 156, 164, and 166. By way ofexample, the refractory metal is titanium having a thickness rangingfrom about 100 Å to about 1,000 Å. A rapid thermal anneal is performedwherein the refractory metal is heated to a temperature ranging fromabout 500° C. to about 700° C. The heat treatment causes the titanium toreact with the silicon to form titanium silicide in all regions in whichthe titanium is in contact with silicon or polysilicon. Alternatively,the refractory metal can be titanium nitride, tungsten, cobalt, or thelike. The silicide formed by the rapid thermal anneal serves as abarrier layer.

Referring now to FIG. 7, a barrier metal 179 may be formed overdielectric layer 172 and the exposed portions of dopant regions 150,152, 154, 156, 164, and 166. It should be noted that barrier metal 179may be comprised of a plurality of metal layers, however they are shownas a single layer for the sake of clarity. A layer of aluminum copper(AlCu) 180 is formed over barrier metal layer 179. By way of example,aluminum copper layer 180 is sputtered onto barrier metal layer 179 andhas a thickness ranging from about 1 micrometer (μm) to about 4 μm.Alternatively, layer 180 may be aluminum, aluminum copper silicon,aluminum silicon, or the like. A layer of photoresist is patterned overaluminum copper silicon layer 180 to form a masking structure 182 havingmasking elements 184 and openings 186 that expose portions of aluminumcopper silicon layer 180.

Referring now to FIG. 8, the exposed portions of aluminum copper siliconlayer 180 are removed using a metal etching process that leaves contacts190, 192, 194, and 196. Layer 180 may be etched using a plasma etch or awet etch. Contact 190 serves as an anode contact for a diode 191 andcontact 192 serves as a cathode contact for diode 191 and an anodecontact for a diode 193, contact 194 serves as an anode contact fordiode 193 and as a collector contact for a bipolar transistor 197, andcontact 196 serves as an emitter contact of bipolar transistor 197. Itshould be noted that dopant region 164 forms the anode of diode 191,dopant region 150 forms the cathode of diode 191, dopant region 166forms the anode of diode 193, dopant region 152 forms the cathode ofdiode 193, dopant region 154 forms the collector of bipolar transistor197, and dopant region 156 forms the emitter of bipolar transistor 197.Contacts 190 and 192 may serve as connection contacts to makeconnections between the common mode filter and other circuit elements.By way of example, diode 191 is analogous to diodes 46 or 50 of FIG. 20,diode 193 is analogous to diodes 44 or 52 of FIG. 20, and bipolartransistor 194 is analogous to transistors 48 or 54 of FIG. 20. Itshould be noted that the anode of diode 50 is connected to the emitterof transistor 54; and that this connection is shown in FIG. 20, but notin the corresponding cross-sectional figures. This connection madeusing, for example an AlCu metal layer that is not shown in thecorresponding cross-sectional figures.

Still referring to FIG. 8, a passivation layer 200 is formed onelectrodes 190-196 and on the exposed portions of dielectric layer 172.By way of example, passivation layer 200 comprises a layer of siliconnitride having a thickness of about 7 kÅ. Alternatively, passivationlayer 200 may be comprised of another suitable dielectric material ormultiple layers of dielectric material.

Referring now to FIG. 9, a layer of photoresist is patterned overpassivation layer 200 to form a masking structure 210 having maskingelements 212 and openings 214 that expose portions of dielectric layer208 over contacts 190 and 192. The portions of dielectric layer 208exposed by openings 214 and the portions of passivation layer 200exposed by openings 214 are removed using, for example, a wet etchtechnique. Removing the exposed portions of passivation layer 200exposes contacts 190 and 192.

Referring now to FIG. 10, masking elements 212 are removed and aphotosensitive polyimide layer 220 having a post-cure thickness of atleast about 8 μm is formed over dielectric layer 208 and the exposedportions of contacts 190 and 192. By way of example, polyimide layer 220is dispensed to have a thickness of about 16 μm and then spin coated tohave a substantially planar surface and a post-cure thickness of about10 μm. Suitable photosensitive polyimide materials includephotosensitive polyimide sold under the trademark PIMEL from Asahi, HDMpolymeric coatings from Hitachi Chemical and DuPont Electronics,polybenzoxazole (PBO), bisbenzocyclobutene (BCB), or the like. It shouldbe noted that layer 200 is not limited to being a photosensitivepolyimide but may be a non-photosensitive material that is patternedusing photoresist. It should be further noted that the thickness ofpolyimide layer 246 may be selected to reduce parasitics such as, forexample, the parasitic capacitance to the silicon diode and transistorstructures, the metal interconnect structures, and the siliconsubstrate.

Referring now to FIG. 11, portions of polyimide layer 220 above theportions of electrodes 190 and 192 that were exposed through openings inpassivation layer 200 are removed by exposure to electromagneticradiation followed by a develop step. Polyimide layer 220 is cured afterremoval of the portions exposed to the electromagnetic radiation.Removal of the exposed portions of polyimide layer 220 re-exposesportions of electrodes 190 and 192.

Still referring to FIG. 11, an adhesion layer 222 having a thicknessranging from about 1,500 Å to about 2,500 Å is formed on polyimide layer220 and on the exposed portions of electrodes 190 and 192. Suitablematerials for adhesion layer 222 include titanium tungsten, titaniumnitride, titanium, tungsten, platinum, or the like. A copper seed layer224 having a thickness ranging from about 1,500 Å to about 5,000 Å isformed on adhesion layer 222. By way of example, layers 222 and 224 areeach about 2,000 Å thick. A layer of photoresist is formed on copperseed layer 224 and patterned to form a masking structure 228 havingmasking elements 230 and openings 232. Preferably, the thickness of thephotoresist layer is selected to be thicker than the copper to be platedin a subsequent step. By way of example, the thickness of thephotoresist layer is about 14 μm.

Briefly referring to FIG. 12, a mask 228 having a masking pattern 233 isillustrated for patterning the photoresist layer. Light passes throughthe dark regions to expose portions of the photoresist layer. Theportions of the photoresist layer exposed to light are removed, leavingmasking elements 230 and exposing portions of copper seed layer 224.

Referring now to FIG. 13, copper is plated onto the exposed portions ofcopper seed layer 224 forming a contact structure 234, a contactstructure 236, and windings 240 of a coil or indictor 242.

Referring now to FIG. 14, masking elements 230 are removed to exposeportions of copper seed layer 224 that were protected by maskingelements 230. The exposed portions of copper seed layer 224 are removedexposing portions of adhesive layer 222, which are also removed toexpose portions of polyimide layer 220. By way of example the portionsof copper seed layer 224 and adhesion layer 222 are removed using a wetetch technique.

A layer of photosensitive material 246 having a thickness of at leastabout 8 μm is formed on the exposed portions of polyimide layer 220, theexposed portions of contact structures 234 and 236, and on windings 240.By way of example, polyimide layer 246 is dispensed to have a thicknessof about 16 μm and then spin coated to have a substantially planarsurface and a post-cure thickness of about 10 μm. It should be notedthat the thickness of polyimide layer 246 is selected to reduceparasitics, e.g., parasitic capacitances, between windings, contactstructures 234 and 236, and windings 240, and a copper layer to beplated above polyimide layer 246. Suitable photosensitive polyimidematerials have been described with reference to polyimide layer 220.

Referring now to FIG. 15, portions of polyimide layer 246 above theportions of contact structures 234 and 236 are removed by exposure toelectromagnetic radiation followed by a develop step. Polyimide layer246 is cured after removal of the portions exposed to theelectromagnetic radiation. Removal of the exposed portions of polyimidelayer 246 exposes portions of contact structures 234 and 236. Anadhesion layer 248 having a thickness ranging from about 1,500 Å toabout 2,500 Å is formed on polyimide layer 246 and on the exposedportions of contact structures 234 and 236. Suitable materials foradhesion layer 248 include titanium tungsten, titanium nitride,titanium, tungsten, platinum, or the like. A copper seed layer 250having a thickness ranging from about 1,500 Å to about 5,000 Å is formedon adhesion layer 248. A layer of photoresist is formed on copper seedlayer 250. Preferably, the thickness of the photoresist layer isselected to be greater than the thickness of a copper layer to be platedon copper seed layer 250. The thickness of the photoresist layer mayrange from about 5 μm to about 20 μm and may be, for example, about 14μm. The photoresist layer is patterned to form masking elements 252having openings 254 that expose portions of copper seed layer 250. Asthose skilled in the art will appreciate, the thickness of photoresistlayer 216 may be process limited because of line width definitionlimitations.

Briefly referring to FIG. 16, a mask 256 having a masking pattern 258 isillustrated for patterning the photoresist layer. Light passes throughthe dark regions to expose portions of the photoresist layer. Theportions of the photoresist layer exposed to light are removed, formingmasking elements 252 and openings 254, which openings 254 exposeportions of copper seed layer 250.

Referring again to FIG. 15, copper is plated onto the exposed portionsof copper seed layer 250 forming a contact structure 260, a contactstructure 262, and windings 264 of a coil or inductor 259.

Referring now to FIG. 17, masking elements 252 are removed to exposeportions of copper seed layer 250 that were protected by maskingelements 252. The exposed portions of copper seed layer 250 are removedexposing portions of adhesive layer 248, which are also removed toexpose portions of polyimide layer 246. By way of example, the portionsof copper seed layer 250 and adhesion layer 248 are removed using a wetetch technique.

A polyimide layer 268 having a post-cure thickness of at least about 8μm is formed on the exposed portions of polyimide layer 246, the exposedportions of contact structures 260 and 262, and on windings 264. By wayof example, polyimide layer 268 is dispensed to have a thickness ofabout 16 μm and then spin coated to have a substantially planar surfaceand a post-cure thickness of about 10 μm. It should be noted that thethickness of polyimide layer 268 is selected to form a passivation layerto cover plated the plated copper to prevent oxidation and/or corrosion.Suitable photosensitive polyimide materials have been described withreference to polyimide layer 220. Like layer 220, layer 246 is notlimited to being a photosensitive polyimide but may be anon-photosensitive material that is patterned using photoresist.

The portions of polyimide layer 268 above contact structures 260 and 262are exposed to electromagnetic radiation, developed and removed toexpose contact structures 260 and 262.

FIG. 18 is a circuit diagram of a semiconductor component 300 thatincludes a common mode filter 302 monolithically integrated with aprotection device 14. What is shown in FIG. 18 are inductors 306 and 308and capacitors 310 and 312. Inductor 306 has an input terminal connectedto a terminal of capacitor 310 and an output terminal connected to theother terminal of capacitor 310 and inductor 308 has an input terminalconnected to a terminal of capacitor 312 and an output terminalconnected to the other terminal of capacitor 312. In accordance with anembodiment, protection device 14 includes a diode 30 having a cathodeconnected to the input terminal of inductor 306 and an anode connectedto the anode of a diode 32. The cathode of diode 32 is connected to theinput terminal of inductor 308. The commonly connected anodes of diode30 and 32 may be connected to receive a source of potential such as, forexample ground.

FIG. 19 is a circuit diagram of a semiconductor component 320 thatincludes a common mode filter 302A monolithically integrated with aprotection device 14. What is shown in FIG. 19 are inductors 306 and 308connected to protection device 14. In accordance with an embodiment,protection device 14 includes a diode 30 having a cathode connected tothe input terminal of inductor 306 and an anode connected to the anodeof a diode 32. The cathode of diode 32 is connected to the inputterminal of filter 308. The commonly connected anodes of diode 30 and 32may be connected to receive a source of potential such as, for exampleground.

FIG. 20 is a circuit diagram of a semiconductor component 350 thatincludes a common mode filter 302 monolithically integrated with aprotection device 14A. What is shown in FIG. 20 are inductors 306 and308 and capacitors 310 and 312, which have been described with referenceto FIG. 18. Inductor 306 has an input terminal connected to a terminalof capacitor 310 and an output terminal connected to the other terminalof capacitor 310 and inductor 308 has an input terminal connected to aterminal of capacitor 312 and an output terminal connected to the otherterminal of capacitor 312.

In accordance with an embodiment, protection device 14A comprises singlechannel ESD structures 40 and 42. ESD structure 40 comprises diodes 44and 46 and an npn bipolar transistor 48 and ESD structure 42 comprisesdiodes 50 and 52 and an npn bipolar transistor 54. Diode 44 has an anodecommonly connected to the cathode of diode 46 and to the non-invertinginput of common mode filter 350. The collector of npn bipolar transistor48 is connected to the cathode of diodes 44 and the emitter of npnbipolar transistor 48 is connected to the anodes of diode 46 and 50.Diode 52 has an anode commonly connected to the cathode of diode 50 andto the non-inverting input of common mode filter 350. The collector ofnpn bipolar transistor 54 is connected to the cathode of diode 52 andthe emitter of npn bipolar transistor 54 is connected to the anodes ofdiodes 46 and 50 and to the emitter of npn bipolar transistor 48.

FIG. 21 is a circuit diagram of a semiconductor component 360 thatincludes a common mode filter 302A monolithically integrated with aprotection device 14A. What is shown in FIG. 21 are inductors 306 and308 connected to protection device 14A. It should be noted that commonmode filter 302A differs from common mode filter 302 in that capacitors310 and 312 are absent from common mode filter 302A.

FIG. 22 is a layout 370 of coil filters such as, for example, coils 306and 308. Coils 306 and 308 are manufactured over a semiconductormaterial having a central region and a peripheral region. Coil 306 isformed in a sub-region of the central region and coil 308 is formed inanother sub-region of the central region. It should be noted that coils306 and 308 are configured to be vertically positioned with respect toeach other and vertically spaced apart by a dielectric material.

FIG. 23 is a plot 364 of the common mode performance and differentialmode performance of a semiconductor component in accordance withembodiments of the present invention. Plot 364 includes a trace 366 ofthe common mode gain versus frequency and a trace 368 of thedifferential mode gain versus frequency. Trace 366 includes notches 372and 374.

FIG. 24 is a plot 376 of ESD clamping performance of a semiconductorcomponent in accordance with embodiments of the present invention inwhich an ESD event is in the positive direction.

FIG. 25 is a plot 378 of ESD clamping performance of a semiconductorcomponent in accordance with embodiments of the present invention inwhich an ESD event is in the negative direction.

Although certain preferred embodiments and methods have been disclosedherein, it will be apparent from the foregoing disclosure to thoseskilled in the art that variations and modifications of such embodimentsand methods may be made without departing from the spirit and scope ofthe invention. It is intended that the invention shall be limited onlyto the extent required by the appended claims and the rules andprinciples of applicable law.

What is claimed is:
 1. A semiconductor component, comprising a commonmode filter monolithically integrated with a protection device, thecommon mode filter comprising: a first coil having first and secondterminals; a second coil having first and second terminals, the firstterminal of the second coil coupled to the first terminal of the firstcoil, the first coil magnetically coupled to the second coil; theprotection device having a first terminal coupled to the first terminalof the first coil and a second terminal coupled to the first terminal ofthe second coil; and wherein the protection device further comprises afirst capacitor coupled between the first terminal and the secondterminal of the first coil and a second capacitor coupled between thefirst terminal and the second terminal of the second coil.
 2. Thesemiconductor component of claim 1, wherein the protection devicecomprises: a first diode having an anode and a cathode, the cathodecoupled to the first terminal of the first coil; and a second diodehaving an anode and a cathode, the anodes of the first and second diodescoupled together and the cathode of the second diode coupled to thefirst terminal of the second coil.
 3. The semiconductor component ofclaim 1, wherein the protection device comprises: a first diode havingan anode and a cathode; and a second diode having an anode and acathode, the cathode of the first diode coupled to the first terminal ofthe first coil, the cathode of the second diode coupled to the anode ofthe first diode.
 4. The semiconductor component of claim 3, furtherincluding a transistor having a control electrode and first and secondcurrent carrying electrodes, the first current carrying electrodecoupled to the cathode of the first diode and the second currentcarrying electrode coupled to the anode of the second diode.
 5. Thesemiconductor component of claim of claim 3, wherein the protectiondevice further comprises: a third diode having an anode and a cathode,the anode of the third diode coupled to the anode of the second diode;and a fourth diode having an anode and a cathode, the anode of thefourth diode coupled to cathode of the third diode and to the firstterminal of the second coil.
 6. The semiconductor component of claim 1,wherein the protection device comprises: a first diode having an anodeand a cathode, the cathode of the first diode coupled to the firstterminal of the first coil; and a second diode having an anode and acathode, the anodes of the first and second diodes coupled together andthe cathode of the second diode coupled to the first terminal of thesecond coil.
 7. A semiconductor component, comprising a common modefilter monolithically integrated with a protection device, the commonmode filter comprising: a first coil having first and second terminals;a second coil having first and second terminals, the first terminal ofthe second coil coupled to the first terminal of the first coil, thefirst coil magnetically coupled to the second coil; the protectiondevice having a first terminal coupled to the first terminal of thefirst coil and a second terminal coupled to the first terminal of thesecond coil, wherein the protection device further comprises: a firstdiode having an anode and a cathode; and a second diode having an anodeand a cathode, the cathode of the first diode coupled to the firstterminal of the first coil, the cathode of the second diode coupled tothe anode of the first diode; a third diode having an anode and acathode, the anode of the third diode coupled to the anode of the seconddiode; and a fourth diode having an anode and a cathode, the anode ofthe fourth diode coupled to cathode of the third diode and to the firstterminal of the second coil; a first transistor having a controlelectrode and first and second current carrying electrodes, the firstcurrent carrying electrode coupled to the cathode of the first diode andthe second current carrying electrode coupled to the anode of the seconddiode and to the anode of the third diode; and a second transistorhaving a control electrode and first and second current carryingelectrodes, the first current carrying electrode of the secondtransistor coupled to the second current carrying electrode of the firsttransistor, and the second current carrying electrode of the secondtransistor coupled to the anode of the fourth diode.
 8. Thesemiconductor component of claim 7, wherein the protection devicefurther comprises a first capacitor coupled between the first terminaland the second terminal of the first coil and a second capacitor coupledbetween the first terminal and the second terminal of the second coil.9. A semiconductor component that includes a common mode filtermonolithically integrated with a protection device, the semiconductorcomponent comprising: a semiconductor material having a peripheralregion, a central region, and a resistivity of at least 5ohm-centimeters, wherein the central region comprises a plurality ofdevice regions isolated by isolation trenches; a first coil over a firstportion of the central region, the first coil having a first terminaland a second terminal; a second coil over a second portion of thecentral region, the second coil having a first terminal and a secondterminal; a first insulating material over the first and second coils;and a protection device monolithically integrated with the first andsecond coils, the protection device having a first terminal coupled tothe first coil and a second terminal coupled to the second coil, whereinthe protection device further comprises: a first diode having an anodeand a cathode, the cathode of the first diode coupled to the firstterminal of the first coil; and a second diode having an anode and acathode, the cathode of the second diode coupled to the second terminalof the second coil, the anode of the second diode coupled to the anodeof the first diode; and wherein the protection device further comprisesa first capacitor coupled between the first terminal and the secondterminal of the first coil and a second capacitor coupled between thefirst terminal and the second terminal of the second coil.
 10. Thesemiconductor component of claim 9, wherein the semiconductor materialcomprises an epitaxial layer formed on a semiconductor substrate, andfurther including: a first metallization system over portions of theepitaxial layer; a first layer of dielectric material over the firstmetallization system; the first coil over the first layer of dielectricmaterial, the first coil having coil elements; a second layer ofdielectric material over the first coil; and the second coil over thefirst layer of dielectric material, the coil elements of the second coillaterally offset from the coil elements of the first coil.
 11. Thesemiconductor component of claim 10, wherein the first layer ofdielectric material and the second layer of dielectric material arephotosensitive polyimide.
 12. The semiconductor component of claim 10,further including a first contact structure extending through the firstlayer of dielectric material, through the second layer of dielectricmaterial and in contact with a portion of the first metallizationsystem.
 13. The semiconductor component of claim 9, wherein theprotection device further includes: a third diode having an anode and acathode, the anode of the third diode coupled to the cathode of thefirst diode; and a fourth diode having an anode and a cathode, the anodeof the fourth diode coupled to cathode of the second diode.
 14. Thesemiconductor component of claim 13, wherein the protection devicefurther comprises: a first transistor having a control electrode andfirst and second current carrying electrodes, the first current carryingelectrode of the first transistor coupled to the anodes of the firstdiode and the second diode and the second current carrying electrode ofthe first transistor coupled to the cathode of the third diode; and asecond transistor having a control electrode and first and secondcurrent carrying electrodes, the first current carrying electrode of thesecond transistor coupled to the first current carrying electrode of thefirst transistor and to the anodes of the first diode and the seconddiode, and the second current carrying electrode of the secondtransistor coupled to the cathode of the fourth diode.